Analytische Chemie: Eine indische Zeitschrift
ISSN (PRINT): 0974-7419

Abstrakt

Well transmission coefficient in indium arsenic resonant tunneling microwave structures

Chih Chin Yang


The In0.53Ga0.47As/In0.52Al0.48As resonant tunneling microwave structures (InAs-based RTMS) is designed in energy band structure of interband with double quantum wells. The influences of carrier transmission coefficient in RTMS device with central barrier thickness which varied from 10Å to 30Å are studied by using theoretical calculation procedure. The transmission coefficients are calculated in considering band gap narrowing (BGN) effect due to the heavily doped effect. The well defined transmission coefficient has been expressed in use of smaller central barrier width, which results in the larger transmission coefficient as considering BGN effect.


Indiziert in

  • CASS
  • Google Scholar
  • Öffnen Sie das J-Tor
  • Nationale Wissensinfrastruktur Chinas (CNKI)
  • CiteFactor
  • Kosmos IF
  • Elektronische Zeitschriftenbibliothek
  • Verzeichnis der Indexierung von Forschungszeitschriften (DRJI)
  • Geheime Suchmaschinenlabore
  • ICMJE

Mehr sehen

Zeitschrift ISSN

H-Index der Zeitschrift

Flyer

Open-Access-Zeitschriften